| 000 | 02453nam a2200421 i 4500 | ||
|---|---|---|---|
| 001 | 000696856 | ||
| 003 | OCoLC | ||
| 005 | 20240105153042.0 | ||
| 008 | 170707t20162016caua rb 000 0 eng d | ||
| 020 | _a1627058524 | ||
| 020 | _a9781627058520 | ||
| 020 | _a1627058532 | ||
| 020 | _a9781627058537 | ||
| 035 | _a419537 | ||
| 040 |
_aYDXCP _bspa _erda _cYDXCP _dUIASF |
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| 050 | 4 |
_aTK 7871.99.C65 _bC65.2016 |
|
| 245 | 0 | 0 |
_aCompound semiconductor materials and devices / _cZhaojun Liu, [y otros cuatro]. |
| 264 | 1 |
_aSan Rafael, California : _bMorgan & Claypool Publishers, _c2016, |
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| 264 | 4 | _c©2016 | |
| 300 |
_avii, 65 páginas : _bilustraciones, gráficas, tablas ; _c24 cm. |
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| 336 |
_atexto _btxt _2rdacontent |
||
| 337 |
_asin mediación _bn _2rdamedia |
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| 338 |
_avolumen _bnc _2rdacarrier |
||
| 490 | 1 |
_aSynthesis lectures on emerging engineering technologies _v3 |
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| 504 | _aIncluye referencias bibliográficas (páginas 47-62). | ||
| 520 | 3 | _aEver since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices. | |
| 650 | 0 | _aCompound semiconductors | |
| 650 | 4 | _aCompuestos semiconductores | |
| 650 | 0 | _aModulation-doped field-effect transistors | |
| 650 | 4 | _aTransistores de efecto de campo de modulación dopada | |
| 700 | 1 |
_aLiu, Zhaojun _c(Ingeniero electrónico) _eautor |
|
| 830 | 0 |
_aSynthesis lectures on emerging engineering technologies _v# 3. |
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| 905 | _a01 | ||
| 942 | 1 | _cNEWBFXC1 | |
| 999 |
_c652525 _d652525 |
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| 980 |
_851 _gRonald RUIZ |
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