Compound semiconductor materials and devices / Zhaojun Liu, [y otros cuatro].
Tipo de material: TextoSeries Synthesis lectures on emerging engineering technologies ; # 3.Editor: San Rafael, California : Morgan & Claypool Publishers, 2016Fecha de copyright: ©2016Descripción: vii, 65 páginas : ilustraciones, gráficas, tablas ; 24 cmTipo de contenido:- texto
- sin mediación
- volumen
- 1627058524
- 9781627058520
- 1627058532
- 9781627058537
- TK 7871.99.C65 C65.2016
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TK 7871.96 M68 Switching transistor handbook / | TK 7871.96 M68 Switching transistor handbook / | TK 7871.99.A45 A463.1999 Amorphous and microcrystalline silicon technology 1998 : symposium held April 14-17, 1998, San Francisco, California, U.S.A. / | TK 7871.99.C65 C65.2016 Compound semiconductor materials and devices / | TK 7871.99.M44 B47 Guide to CMOS : basics, circuits, & experiments / | TK 7871.99.T5 R34 Power electronics : thryristor controlles power for electronic motors / | TK 7871.99.T5 S48 Thyristor control of AC circuits / |
Incluye referencias bibliográficas (páginas 47-62).
Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.